FDB9403-F085
- Mfr.Part #
- FDB9403-F085
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 110A TO263AB
- Stock
- 46
- In Stock :
- 46
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Rise Time :
- 19.5ns
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 968 mJ
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 333W Tj
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Elements :
- 1
- Weight :
- 1.31247g
- Continuous Drain Current (ID) :
- 110A
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 12700pF @ 25V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Length :
- 10.67mm
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 46 ns
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 1.2m Ω @ 80A, 10V
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- Power Dissipation :
- 333W
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 61 ns
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 213nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 4.83mm
- Drain to Source Breakdown Voltage :
- 40V
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 9.65mm
- Packaging :
- Cut Tape (CT)
- Factory Lead Time :
- 5 Weeks
- Element Configuration :
- Single
- Turn On Delay Time :
- 16 ns
- Datasheets
- FDB9403-F085

N-Channel Cut Tape (CT) 1.2m Ω @ 80A, 10V ±20V 12700pF @ 25V 213nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB9403-F085 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 968 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 12700pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [61 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
FDB9403-F085 Features
the avalanche energy rating (Eas) is 968 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 61 ns
FDB9403-F085 Applications
There are a lot of ON Semiconductor
FDB9403-F085 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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