FDA69N25
- Mfr.Part #
- FDA69N25
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 10,455
- In Stock :
- 10,455
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Published :
- 2013
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 6.401g
- Length :
- 15.8mm
- Continuous Drain Current (ID) :
- 69A
- Gate to Source Voltage (Vgs) :
- 30V
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power Dissipation :
- 480W
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Rise Time :
- 885ns
- Turn On Delay Time :
- 95 ns
- Factory Lead Time :
- 9 Weeks
- Voltage - Rated DC :
- 250V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Current Rating :
- 69A
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Additional Feature :
- FAST SWITCHING
- Package / Case :
- TO-3P-3, SC-65-3
- Pulsed Drain Current-Max (IDM) :
- 276A
- Current - Continuous Drain (Id) @ 25°C :
- 69A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- UniFET™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 34.5A, 10V
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 130 ns
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Height :
- 20.1mm
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4640pF @ 25V
- Power Dissipation-Max :
- 480W Tc
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 220 ns
- Width :
- 5mm
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 250V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDA69N25

N-Channel Tube 41m Ω @ 34.5A, 10V ±30V 4640pF @ 25V 100nC @ 10V TO-3P-3, SC-65-3
FDA69N25 Description
FDA69N25 is an N-channel UniFETTM MOSFET.UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. The FDA69N25 MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The onsemi FDA69N25 is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDA69N25 Features
-
RDS(on) = 41m? ( Max.)@ VGS = 10V, ID = 34.5A
-
Low gate charge ( Typ. 77nC)
-
Low Crss ( Typ. 84pF)
-
Drain-Source Voltage: 250V
-
Gate Source Voltage: ±30V
FDA69N25 Applications
-
PDP TV
-
Uninterruptible Power Supply
-
AC-DC Power Supply
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