FDA62N28
- Mfr.Part #
- FDA62N28
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 280V 62A TO3PN
- Stock
- 59,436
- In Stock :
- 59,436
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Series :
- UniFET™
- Rds On (Max) @ Id, Vgs :
- 51m Ω @ 31A, 10V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain Current-Max (Abs) (ID) :
- 62A
- Pulsed Drain Current-Max (IDM) :
- 248A
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.63pF @ 25V
- Surface Mount :
- No
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 1919 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 280V
- Transistor Application :
- SWITCHING
- Qualification Status :
- COMMERCIAL
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.051Ohm
- Terminal Finish :
- MATTE TIN
- Drain to Source Voltage (Vdss) :
- 280V
- Package / Case :
- TO-3P-3, SC-65-3
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 500W Tc
- Number of Elements :
- 1
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDA62N28

N-Channel Tube 51m Ω @ 31A, 10V ±30V 4.63pF @ 25V 100nC @ 10V 280V TO-3P-3, SC-65-3
FDA62N28 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1919 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4.63pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 62A.Pulsed drain current is maximum rated peak drain current 248A.A normal operation of the DS requires keeping the breakdown voltage above 280V.This transistor requires a drain-source voltage (Vdss) of 280V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FDA62N28 Features
the avalanche energy rating (Eas) is 1919 mJ
based on its rated peak drain current 248A.
a 280V drain to source voltage (Vdss)
FDA62N28 Applications
There are a lot of Rochester Electronics, LLC
FDA62N28 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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