FDA62N28
- Mfr.Part #
- FDA62N28
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 280V 62A TO3PN
- Stock
- 59,436
- In Stock :
- 59,436
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.63pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 248A
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Series :
- UniFET™
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- COMMERCIAL
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.051Ohm
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 1919 mJ
- DS Breakdown Voltage-Min :
- 280V
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 62A
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Power Dissipation-Max :
- 500W Tc
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 51m Ω @ 31A, 10V
- Drain to Source Voltage (Vdss) :
- 280V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- MATTE TIN
- Package / Case :
- TO-3P-3, SC-65-3
- Datasheets
- FDA62N28

N-Channel Tube 51m Ω @ 31A, 10V ±30V 4.63pF @ 25V 100nC @ 10V 280V TO-3P-3, SC-65-3
FDA62N28 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1919 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4.63pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 62A.Pulsed drain current is maximum rated peak drain current 248A.A normal operation of the DS requires keeping the breakdown voltage above 280V.This transistor requires a drain-source voltage (Vdss) of 280V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FDA62N28 Features
the avalanche energy rating (Eas) is 1919 mJ
based on its rated peak drain current 248A.
a 280V drain to source voltage (Vdss)
FDA62N28 Applications
There are a lot of Rochester Electronics, LLC
FDA62N28 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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