FDA38N30

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

54 ns

Packaging :

Tube

Continuous Drain Current (ID) :

38A

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

312W Tc

Power Dissipation :

312W

Element Configuration :

Single

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Factory Lead Time :

4 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Width :

6.35mm

Lead Free :

Lead Free

Mounting Type :

Through Hole

Mount :

Through Hole

Weight :

6.401g

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Length :

6.35mm

Turn On Delay Time :

53 ns

Number of Pins :

3

FET Type :

N-Channel

Vgs (Max) :

±30V

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Turn-Off Delay Time :

118 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

300V

Height :

6.35mm

Resistance :

85mOhm

Package / Case :

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Rds On (Max) @ Id, Vgs :

85m Ω @ 19A, 10V

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Rise Time :

110ns

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Number of Elements :

1

Series :

UniFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Threshold Voltage :

5V