FDA33N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-3P-3, SC-65-3

Series :

UniFET™

JESD-609 Code :

e3

Power Dissipation :

245W

Factory Lead Time :

6 Weeks

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

94m Ω @ 16.5A, 10V

Number of Pins :

3

Width :

5mm

Number of Elements :

1

Drain-source On Resistance-Max :

0.094Ohm

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Rise Time :

142ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

245W Tc

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Fall Time (Typ) :

68 ns

ECCN Code :

EAR99

Vgs (Max) :

±30V

Turn-Off Delay Time :

77 ns

Height :

20.1mm

Turn On Delay Time :

33 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

6.401g

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Mount :

Through Hole

Packaging :

Tube

Continuous Drain Current (ID) :

33A

Length :

16.2mm

Gate Charge (Qg) (Max) @ Vgs :

46.8nC @ 10V

Published :

2014

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

250V