FDA38N30
- Mfr.Part #
- FDA38N30
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 38A TO3PN
- Stock
- 221
- In Stock :
- 221
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Application :
- SWITCHING
- Length :
- 6.35mm
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 19A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Series :
- UniFET™
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 300V
- Weight :
- 6.401g
- Number of Elements :
- 1
- Width :
- 6.35mm
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 38A
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Resistance :
- 85mOhm
- Power Dissipation :
- 312W
- Factory Lead Time :
- 4 Weeks
- Fall Time (Typ) :
- 54 ns
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 118 ns
- Power Dissipation-Max :
- 312W Tc
- Package / Case :
- TO-3P-3, SC-65-3
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 6.35mm
- Mount :
- Through Hole
- Turn On Delay Time :
- 53 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Threshold Voltage :
- 5V
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Rise Time :
- 110ns
- Published :
- 2013
- Datasheets
- FDA38N30

N-Channel Tube 85m Ω @ 19A, 10V ±30V 2600pF @ 25V 60nC @ 10V TO-3P-3, SC-65-3
FDA38N30 Description
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. FDA38N30 MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. FDA38N30 is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDA38N30 Features
-
RoHS compliant
-
Low Crss ( Typ. 60pF)
-
100% avalanche tested
-
ESD improved capability
-
Low gate charge ( Typ. 60nC)
-
RDS(on) = 70m? ( Typ.)@ VGS = 10V, ID = 19A
FDA38N30 Applications
-
PDP TV
-
AC-DC power supply
-
Uninterruptible power supply
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDA33N25 | onsemi | 30,284 | MOSFET N-CH 250V 33A TO3PN |
| FDA38N30 | onsemi | 221 | POWER FIELD-EFFECT TRANSISTOR, 3 |
















