FDA28N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

2

Power Dissipation :

310W

Width :

5mm

Resistance :

155mOhm

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Rds On (Max) @ Id, Vgs :

155m Ω @ 14A, 10V

Drain to Source Breakdown Voltage :

500V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

310W Tc

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Factory Lead Time :

9 Weeks

Packaging :

Tube

Height :

20.1mm

Gate to Source Voltage (Vgs) :

30V

Rise Time :

126ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

UniFET™

Vgs (Max) :

±30V

Length :

15.8mm

Package / Case :

TO-3P-3, SC-65-3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Weight :

6.401g

Input Capacitance (Ciss) (Max) @ Vds :

5140pF @ 25V

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

28A Tc

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Mount :

Through Hole

FET Type :

N-Channel

JESD-609 Code :

e3

Turn On Delay Time :

56 ns

Turn-Off Delay Time :

210 ns

Fall Time (Typ) :

110 ns

Continuous Drain Current (ID) :

28A

Pbfree Code :

yes

Number of Terminations :

3