FDA28N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Rise Time :

126ns

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

JESD-609 Code :

e3

Length :

15.8mm

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

5140pF @ 25V

Power Dissipation-Max :

310W Tc

Continuous Drain Current (ID) :

28A

Element Configuration :

Single

FET Type :

N-Channel

Number of Pins :

2

Resistance :

155mOhm

Series :

UniFET™

Drain to Source Breakdown Voltage :

500V

Width :

5mm

Number of Terminations :

3

ECCN Code :

EAR99

Turn On Delay Time :

56 ns

Factory Lead Time :

9 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

210 ns

Operating Temperature :

-55°C~150°C TJ

Height :

20.1mm

Power Dissipation :

310W

Weight :

6.401g

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On (Max) @ Id, Vgs :

155m Ω @ 14A, 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Lead Free :

Lead Free

Pbfree Code :

yes

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

110 ns

Package / Case :

TO-3P-3, SC-65-3

JESD-30 Code :

R-PSFM-T3