FDA24N50
- Mfr.Part #
- FDA24N50
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 24A TO3PN
- Stock
- 12,384
- In Stock :
- 12,384
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 20.1mm
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 47 ns
- Rise Time :
- 108ns
- Width :
- 5mm
- Package / Case :
- TO-3P-3, SC-65-3
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 12A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 164 ns
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Published :
- 2013
- Number of Pins :
- 2
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 270W Tc
- Factory Lead Time :
- 4 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 96A
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Application :
- SWITCHING
- Resistance :
- 190mOhm
- Threshold Voltage :
- 5V
- Fall Time (Typ) :
- 86 ns
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Pbfree Code :
- yes
- Power Dissipation :
- 270W
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Weight :
- 6.401g
- Drain to Source Breakdown Voltage :
- 500V
- Length :
- 15.8mm
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 24A
- JESD-30 Code :
- R-PSFM-T3
- Series :
- UniFET™
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDA24N50

N-Channel Tube 190m Ω @ 12A, 10V ±30V 4150pF @ 25V 85nC @ 10V TO-3P-3, SC-65-3
FDA24N50 Description
A high voltage MOSFET family called UniFETTM MOSFET is based on DMOS and planar stripe technology. This MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. For switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.
FDA24N50 Features
-
RDS(on) = 160m? ( Typ.)@ VGS = 10V, ID = 12A
-
Low gate charge ( Typ. 65nC)
-
Low Crss ( Typ. 35pF)
-
100% avalanche tested
-
RoHS compliant
FDA24N50 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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