FDA20N50

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Resistance :

260mOhm

Power Dissipation-Max :

388W Tc

Power Dissipation :

388W

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

45 ns

Factory Lead Time :

4 Weeks

Packaging :

Tube

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

15.8mm

Contact Plating :

Tin

Fall Time (Typ) :

60 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

120ns

Turn-Off Delay Time :

100 ns

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Weight :

6.401g

ECCN Code :

EAR99

Package / Case :

TO-3P-3, SC-65-3

Pulsed Drain Current-Max (IDM) :

88A

Height :

20.1mm

Vgs (Max) :

±30V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

500V

Continuous Drain Current (ID) :

22A

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Mounting Type :

Through Hole

Width :

5mm

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Series :

UniFET™

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

260m Ω @ 11A, 10V

Radiation Hardening :

No

FET Type :

N-Channel

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

2