FDA2712

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Mfr.Part #
FDA2712
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 250V 64A TO3PN
Stock
6,299
In Stock :
6,299

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
250V
Drain Current-Max (Abs) (ID) :
64A
Drain to Source Voltage (Vdss) :
250V
Vgs (Max) :
±30V
Terminal Position :
Single
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Unknown
JESD-30 Code :
R-PSFM-T3
FET Type :
N-Channel
Power Dissipation-Max :
357W Tc
Qualification Status :
COMMERCIAL
Input Capacitance (Ciss) (Max) @ Vds :
10.175pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
34m Ω @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C :
64A Tc
Packaging :
Tube
Transistor Element Material :
SILICON
Package / Case :
TO-3P-3, SC-65-3
Series :
UltraFET™
Pin Count :
3
Drain-source On Resistance-Max :
0.034Ohm
Gate Charge (Qg) (Max) @ Vgs :
129nC @ 10V
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
240A
Avalanche Energy Rating (Eas) :
245 mJ
Number of Terminations :
3
Datasheets
FDA2712
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDA2712 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-3P-3, SC-65-3, Number of Terminations:3, FDA2712 pinout, FDA2712 datasheet PDF, FDA2712 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDA2712 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDA2712


N-Channel Tube 34m Ω @ 40A, 10V ±30V 10.175pF @ 25V 129nC @ 10V 250V TO-3P-3, SC-65-3

FDA2712 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 245 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10.175pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 64A.Pulsed drain current is maximum rated peak drain current 240A.A normal operation of the DS requires keeping the breakdown voltage above 250V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FDA2712 Features


the avalanche energy rating (Eas) is 245 mJ
based on its rated peak drain current 240A.
a 250V drain to source voltage (Vdss)


FDA2712 Applications


There are a lot of Rochester Electronics, LLC
FDA2712 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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