FDA2712
- Mfr.Part #
- FDA2712
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 64A TO3PN
- Stock
- 6,299
- In Stock :
- 6,299
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 250V
- Drain Current-Max (Abs) (ID) :
- 64A
- Drain to Source Voltage (Vdss) :
- 250V
- Vgs (Max) :
- ±30V
- Terminal Position :
- Single
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 357W Tc
- Qualification Status :
- COMMERCIAL
- Input Capacitance (Ciss) (Max) @ Vds :
- 10.175pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 40A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-3P-3, SC-65-3
- Series :
- UltraFET™
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.034Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 129nC @ 10V
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 240A
- Avalanche Energy Rating (Eas) :
- 245 mJ
- Number of Terminations :
- 3
- Datasheets
- FDA2712

N-Channel Tube 34m Ω @ 40A, 10V ±30V 10.175pF @ 25V 129nC @ 10V 250V TO-3P-3, SC-65-3
FDA2712 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 245 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10.175pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 64A.Pulsed drain current is maximum rated peak drain current 240A.A normal operation of the DS requires keeping the breakdown voltage above 250V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FDA2712 Features
the avalanche energy rating (Eas) is 245 mJ
based on its rated peak drain current 240A.
a 250V drain to source voltage (Vdss)
FDA2712 Applications
There are a lot of Rochester Electronics, LLC
FDA2712 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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