FD900R12IP4DVBOSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Terminal Form :

UNSPECIFIED

Number of Elements :

1

Lead Free :

Contains Lead

Transistor Application :

GENERAL PURPOSE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

5mA

NTC Thermistor :

yes

Configuration :

Single

Input Capacitance (Cies) @ Vce :

54nF @ 25V

Package / Case :

Module

Halogen Free :

Not Halogen Free

Factory Lead Time :

50 Weeks

Vce(on) (Max) @ Vge, Ic :

2.05V @ 15V, 900A

Mounting Type :

Chassis Mount

Published :

2002

Voltage - Collector Emitter Breakdown (Max) :

1200V

Number of Terminations :

10

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

IGBT Type :

Trench Field Stop

Terminal Position :

UPPER

Additional Feature :

UL RECOGNIZED

Current - Collector (Ic) (Max) :

900A

ECCN Code :

EAR99

Power - Max :

5100W

JESD-30 Code :

R-PUFM-X10

Turn Off Time-Nom (toff) :

1300 ns

Input :

Standard

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Case Connection :

Isolated

Turn On Time :

370 ns

Operating Temperature :

-40°C~150°C