FD400R07PE4RB6BOSA1

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Mfr.Part #
FD400R07PE4RB6BOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 650V 460A 1150W
Stock
84
In Stock :
84

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Published :
2002
Mounting Type :
Chassis Mount
Factory Lead Time :
16 Weeks
RoHS Status :
Non-RoHS Compliant
Input Capacitance (Cies) @ Vce :
18.5nF @ 25V
Current - Collector Cutoff (Max) :
20μA
Voltage - Collector Emitter Breakdown (Max) :
650V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
NTC Thermistor :
yes
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 400A
Input :
Standard
Lead Free :
Contains Lead
Package / Case :
Module
Current - Collector (Ic) (Max) :
460A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
1150W
Configuration :
Three Phase Inverter
IGBT Type :
Trench Field Stop
Halogen Free :
Not Halogen Free
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Operating Temperature :
-40°C~150°C
Introducing Transistors - IGBTs - Modules Infineon Technologies FD400R07PE4RB6BOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Package / Case:Module, Operating Temperature:-40°C~150°C, FD400R07PE4RB6BOSA1 pinout, FD400R07PE4RB6BOSA1 datasheet PDF, FD400R07PE4RB6BOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FD400R07PE4RB6BOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



FD400R07PE4RB6BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FD400R07PE4RB6BOSA1 Description


FD400R07PE4RB6BOSA1 developed by Infineon Technologies belongs to the family of EconoPACK?4 modules with trench/fieldstop IGBT 4 and emitter-controlled 4 diodes and NTC. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



FD400R07PE4RB6BOSA1 Features


Increased blocking voltage capability to 650V

Extended Operation Temperature Tvjop

Trench IGBT 4

Tvjop=150°C

VCEsat with a positive Temperature Coefficient



FD400R07PE4RB6BOSA1 Applications


Solar applications

Motor drives

Chopper applications

UPS systems


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