FD-DF80R12W1H3_B52

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Mfr.Part #: FD-DF80R12W1H3_B52

Manufacturer: Infineon Technologies

Package / Case: Module

Datasheet: Download

Description: IGBT MOD 1200V 40A 215W

Stock: 11,655

In Stock ：: 11,655

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Manufacturer :: Infineon Technologies
Product Category :: Transistors - IGBTs - Modules

Voltage - Collector Emitter Breakdown (Max) :: 1200V

Vce(on) (Max) @ Vge, Ic :: 2.4V @ 15V, 40A

RoHS Status :: Non-RoHS Compliant

Input :: Standard

Current - Collector (Ic) (Max) :: 40A

Factory Lead Time :: 24 Weeks

Current - Collector Cutoff (Max) :: 1mA

Package / Case :: Module

Input Capacitance (Cies) @ Vce :: 235nF @ 25V

Moisture Sensitivity Level (MSL) :: Not Applicable

Configuration :: Single

Operating Temperature :: -40°C~125°C

Reach Compliance Code :: Unknown

Power - Max :: 215W

Published :: 2014

NTC Thermistor :: yes

Mounting Type :: Chassis Mount

IGBT Type :: Trench Field Stop

Datasheets: FD-DF80R12W1H3_B52

Introducing Transistors - IGBTs - Modules Infineon Technologies FD-DF80R12W1H3_B52 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case：Module, Operating Temperature：-40°C~125°C, Mounting Type：Chassis Mount, FD-DF80R12W1H3_B52 pinout, FD-DF80R12W1H3_B52 datasheet PDF, FD-DF80R12W1H3_B52 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FD-DF80R12W1H3_B52 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

FD-DF80R12W1H3_B52 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FD-DF80R12W1H3_B52 Description

FD-DF80R12W1H3_B52 is a single IGBT with a Collector Emitter Breakdown Voltage of 1200V from Infineon Technologies. FD-DF80R12W1H3_B52 operates between -40°C~125°C, and its Current - Collector (Ic) (Max) is 40A. The FD-DF80R12W1H3_B52 has 3 pins and it is available in Module packaging way. FD-DF80R12W1H3_B52 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

FD-DF80R12W1H3_B52 Features

Increased blocking voltage capability to 650V
High Speed IGBT H3
Low Inductive Design
Low VCEsat

FD-DF80R12W1H3_B52 Applications

Power Management
Consumer Electronics
Portable Devices
Industrial

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