FCX596TA
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- Mfr.Part #
- FCX596TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 0.3A SOT89-3
- Stock
- 802
- In Stock ：
- 802
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Height :
- 1.5mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Weight :
- 51.993025mg
- Power Dissipation :
- 1W
- Width :
- 2.5mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 250mA 10V
- Voltage - Rated DC :
- -200V
- Continuous Collector Current :
- -300mA
- Max Breakdown Voltage :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- FCX596
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -350mV
- Current - Collector Cutoff (Max) :
- 100nA
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Length :
- 4.5mm
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Terminal Form :
- Flat
- Frequency :
- 150MHz
- Current Rating :
- -300mA
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 220V
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 250mA
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 200V
- Max Collector Current :
- 300mA
- Gain Bandwidth Product :
- 150MHz
- Operating Temperature :
- -65°C~150°C TJ
- REACH SVHC :
- No SVHC
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- 200V
- Datasheets
- FCX596TA
PNP -65°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
FCX596TA Overview
In this device, the DC current gain is 85 @ 250mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -350mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 25mA, 250mA.A -300mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -300mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 200V volts.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.
FCX596TA Features
the DC current gain for this device is 85 @ 250mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 25mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -300mA
a transition frequency of 150MHz
FCX596TA Applications
There are a lot of Diodes Incorporated
FCX596TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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