FCX589TA
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- Mfr.Part #
- FCX589TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A SOT89-3
- Stock
- 22,880
- In Stock ：
- 22,880
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Base Part Number :
- FCX589
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Form :
- Flat
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Length :
- 4.5mm
- Current Rating :
- -1A
- Case Connection :
- COLLECTOR
- Published :
- 2006
- Weight :
- 51.993025mg
- Max Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.5mm
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Continuous Collector Current :
- -1A
- Package / Case :
- TO-243AA
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Power Dissipation :
- 1W
- Voltage - Rated DC :
- -30V
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -650mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Width :
- 2.5mm
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 15 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 200mA, 2A
- Datasheets
- FCX589TA
PNP -65°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
FCX589TA Overview
In this device, the DC current gain is 100 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 200mA, 2A.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).100MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
FCX589TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
FCX589TA Applications
There are a lot of Diodes Incorporated
FCX589TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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