FCH25N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3352pF @ 100V

Length :

15.87mm

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

25A

Threshold Voltage :

2V

Turn-Off Delay Time :

68 ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Series :

SupreMOS™

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

75A

Turn On Delay Time :

21 ns

Height :

20.82mm

Rise Time :

22ns

FET Type :

N-Channel

Mount :

Through Hole

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-247AB

Published :

2013

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Power Dissipation-Max :

216W Tc

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Width :

4.82mm

Fall Time (Typ) :

5 ns

Drain to Source Breakdown Voltage :

600V

Transistor Application :

SWITCHING

Power Dissipation :

216W

Pbfree Code :

yes

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

126m Ω @ 12.5A, 10V

REACH SVHC :

No SVHC

Weight :

6.39g

Element Configuration :

Single

Package / Case :

TO-247-3

Radiation Hardening :

No