FCH20N60

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Mfr.Part #
FCH20N60
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 20A TO247-3
Stock
30,155
In Stock :
30,155

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Number of Elements :
1
Qualification Status :
COMMERCIAL
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) :
20A
Power Dissipation-Max :
208W Tc
Pulsed Drain Current-Max (IDM) :
60A
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
690 mJ
Vgs(th) (Max) @ Id :
5V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Transistor Application :
SWITCHING
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
190m Ω @ 10A, 10V
Packaging :
Tube
Series :
SuperFET™
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Mounting Type :
Through Hole
Package / Case :
TO-247-3
DS Breakdown Voltage-Min :
600V
JEDEC-95 Code :
TO-247AD
Terminal Position :
Single
Terminal Finish :
MATTE TIN
Vgs (Max) :
±30V
Drain to Source Voltage (Vdss) :
600V
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
3.08pF @ 25V
Drain-source On Resistance-Max :
0.19Ohm
Peak Reflow Temperature (Cel) :
Not Applicable
Datasheets
FCH20N60
Introducing Transistors - FETs, MOSFETs - Single onsemi FCH20N60 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, FCH20N60 pinout, FCH20N60 datasheet PDF, FCH20N60 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCH20N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCH20N60


N-Channel Tube 190m Ω @ 10A, 10V ±30V 3.08pF @ 25V 98nC @ 10V 600V TO-247-3

FCH20N60 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 690 mJ.A device's maximum input capacitance is 3.08pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 20A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

FCH20N60 Features


the avalanche energy rating (Eas) is 690 mJ
based on its rated peak drain current 60A.
a 600V drain to source voltage (Vdss)


FCH20N60 Applications


There are a lot of Rochester Electronics, LLC
FCH20N60 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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