FCH20N60
- Mfr.Part #
- FCH20N60
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A TO247-3
- Stock
- 30,155
- In Stock :
- 30,155
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 20A
- Power Dissipation-Max :
- 208W Tc
- Pulsed Drain Current-Max (IDM) :
- 60A
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 10A, 10V
- Packaging :
- Tube
- Series :
- SuperFET™
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- DS Breakdown Voltage-Min :
- 600V
- JEDEC-95 Code :
- TO-247AD
- Terminal Position :
- Single
- Terminal Finish :
- MATTE TIN
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 600V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.08pF @ 25V
- Drain-source On Resistance-Max :
- 0.19Ohm
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Datasheets
- FCH20N60

N-Channel Tube 190m Ω @ 10A, 10V ±30V 3.08pF @ 25V 98nC @ 10V 600V TO-247-3
FCH20N60 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 690 mJ.A device's maximum input capacitance is 3.08pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 20A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FCH20N60 Features
the avalanche energy rating (Eas) is 690 mJ
based on its rated peak drain current 60A.
a 600V drain to source voltage (Vdss)
FCH20N60 Applications
There are a lot of Rochester Electronics, LLC
FCH20N60 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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