FCH20N60
- Mfr.Part #
- FCH20N60
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A TO247-3
- Stock
- 30,155
- In Stock :
- 30,155
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Qualification Status :
- COMMERCIAL
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 10A, 10V
- Series :
- SuperFET™
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.19Ohm
- DS Breakdown Voltage-Min :
- 600V
- Pin Count :
- 3
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Power Dissipation-Max :
- 208W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-247AD
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.08pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 20A
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 60A
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- MATTE TIN
- Datasheets
- FCH20N60
FCH20N60 Documents

N-Channel Tube 190m Ω @ 10A, 10V ±30V 3.08pF @ 25V 98nC @ 10V 600V TO-247-3
FCH20N60 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 690 mJ.A device's maximum input capacitance is 3.08pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 20A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FCH20N60 Features
the avalanche energy rating (Eas) is 690 mJ
based on its rated peak drain current 60A.
a 600V drain to source voltage (Vdss)
FCH20N60 Applications
There are a lot of Rochester Electronics, LLC
FCH20N60 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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