FCH20N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Elements :

1

Package / Case :

TO-247-3

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Avalanche Energy Rating (Eas) :

690 mJ

Series :

SuperFET™

Pulsed Drain Current-Max (IDM) :

60A

Peak Reflow Temperature (Cel) :

Not Applicable

Drain Current-Max (Abs) (ID) :

20A

Drain-source On Resistance-Max :

0.19Ohm

Vgs (Max) :

±30V

Power Dissipation-Max :

208W Tc

Qualification Status :

COMMERCIAL

Surface Mount :

No

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Packaging :

Tube

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3.08pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247AD

Drain to Source Voltage (Vdss) :

600V