FCH170N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

22A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Packaging :

Tube

Turn-Off Delay Time :

55 ns

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 380V

Number of Channels :

1

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Pbfree Code :

yes

Power Dissipation-Max :

227W Tc

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Number of Pins :

3

Fall Time (Typ) :

3.8 ns

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

66A

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Weight :

6.39g

JEDEC-95 Code :

TO-247AB

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

21 ns

Package / Case :

TO-247-3

Series :

SuperFET® II

Avalanche Energy Rating (Eas) :

525 mJ

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

15.87mm

Vgs (Max) :

±20V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Published :

2014

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

170m Ω @ 11A, 10V

Gate to Source Voltage (Vgs) :

30V

Rise Time :

12ns

Height :

20.82mm

Width :

4.82mm

Element Configuration :

Single