FCH104N60
- Mfr.Part #
- FCH104N60
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 37A TO247-3
- Stock
- 35
- In Stock :
- 35
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 20.82mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 4165pF @ 380V
- Turn On Delay Time :
- 26 ns
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 600V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Fall Time (Typ) :
- 3.3 ns
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Length :
- 15.87mm
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 37A
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 72 ns
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Power Dissipation-Max :
- 357W Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- JEDEC-95 Code :
- TO-247AB
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 809 mJ
- Weight :
- 6.39g
- Element Configuration :
- Single
- Published :
- 2014
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 104m Ω @ 18.5A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Rise Time :
- 18ns
- Series :
- SuperFET® II
- Width :
- 4.82mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Datasheets
- FCH104N60

N-Channel Tube 104m Ω @ 18.5A, 10V ±20V 4165pF @ 380V 82nC @ 10V 600V TO-247-3
FCH104N60 is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
FCH104N60 Features
650 V @ TJ = 150°C
Typ. RDS(on) = 96 mΩ
Ultra Low Gate Charge (Typ. Qg = 63 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF)
100% Avalanche Tested
RoHS Compliant
FCH104N60 Applications
Industrial Power Supplies
Telecom / Server Power Supplies
Advanced driver assistance systems (ADAS)
Body electronics & lighting Hybrid
electric & power train systems
Infotainment & cluster
Broadband fixed line access
Datacom module
Wired networking
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