FCH104N60F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.39g

Height :

20.82mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Published :

2013

Continuous Drain Current (ID) :

37A

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Package / Case :

TO-247-3

Fall Time (Typ) :

20 ns

Avalanche Energy Rating (Eas) :

809 mJ

Turn On Delay Time :

34 ns

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

600V

Gate to Source Voltage (Vgs) :

5V

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Mounting Type :

Through Hole

Width :

4.82mm

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-247AB

ECCN Code :

EAR99

Rise Time :

58ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Series :

HiPerFET™, Polar™

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5950pF @ 100V

JESD-609 Code :

e3

Pbfree Code :

yes

Number of Elements :

1

Power Dissipation-Max :

357W Tc

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

98 ns

Power Dissipation :

357W

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

104m Ω @ 18.5A, 10V

Drain to Source Breakdown Voltage :

650V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Transistor Element Material :

SILICON

Length :

15.87mm