FCH104N60F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Gate to Source Voltage (Vgs) :

5V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

37A

Drain to Source Voltage (Vdss) :

600V

Power Dissipation :

357W

Rds On (Max) @ Id, Vgs :

104m Ω @ 18.5A, 10V

Power Dissipation-Max :

357W Tc

Package / Case :

TO-247-3

Radiation Hardening :

No

Weight :

6.39g

Height :

20.82mm

FET Type :

N-Channel

Pbfree Code :

yes

JEDEC-95 Code :

TO-247AB

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Width :

4.82mm

Mount :

Through Hole

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

5950pF @ 100V

Published :

2013

Fall Time (Typ) :

20 ns

Number of Pins :

3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

34 ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

37A Tc

RoHS Status :

ROHS3 Compliant

Length :

15.87mm

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

809 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

98 ns

Rise Time :

58ns

Drain to Source Breakdown Voltage :

650V

Number of Terminations :

3

Series :

HiPerFET™, Polar™