FCH104N60F
- Mfr.Part #
- FCH104N60F
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 37A TO247-3
- Stock
- 24,605
- In Stock :
- 24,605
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Terminal Finish :
- Tin (Sn)
- JEDEC-95 Code :
- TO-247AB
- Length :
- 15.87mm
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 650V
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 600V
- Avalanche Energy Rating (Eas) :
- 809 mJ
- Width :
- 4.82mm
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 104m Ω @ 18.5A, 10V
- Vgs (Max) :
- ±20V
- Series :
- HiPerFET™, Polar™
- Published :
- 2013
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 5V
- Number of Elements :
- 1
- Packaging :
- Tube
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 357W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Rise Time :
- 58ns
- Weight :
- 6.39g
- Factory Lead Time :
- 12 Weeks
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 37A
- FET Type :
- N-Channel
- Package / Case :
- TO-247-3
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 20 ns
- Height :
- 20.82mm
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 5950pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 139nC @ 10V
- Turn On Delay Time :
- 34 ns
- Power Dissipation-Max :
- 357W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 98 ns
- Datasheets
- FCH104N60F

N-Channel Tube 104m Ω @ 18.5A, 10V ±20V 5950pF @ 100V 139nC @ 10V 600V TO-247-3
FCH104N60F Description
The SUPERFET? II MOSFET is a brand new high voltage super junction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SUPERFET II is ideal for Soft and Hard Switching topologies such as High Voltage Full Bridge and Half-Bridge DCDC, Interleaved Boost PFC, and Boost PFC for HEVEV automobiles.
The enhanced body diode reverse recovery performance of the SUPERFET II FRFET? MOSFET can eliminate a component and improve system reliability.
FCH104N60F Features
-
UIS Capability
-
Qualified to AEC Q101 and PPAP Capable
-
This Device is Pb?Free and is RoHS Compliant
-
Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A
-
Typical Qg(tot) = 109 nC at VGS = 10 V, ID = 18.5 A
FCH104N60F Applications
-
Automotive On-Board Charger
-
Automotive DC/DC Converter for HEV
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