FCH104N60F

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Mfr.Part #
FCH104N60F
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 37A TO247-3
Stock
24,605
In Stock :
24,605

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Terminal Finish :
Tin (Sn)
JEDEC-95 Code :
TO-247AB
Length :
15.87mm
Current - Continuous Drain (Id) @ 25°C :
37A Tc
Number of Pins :
3
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Drain to Source Breakdown Voltage :
650V
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
600V
Avalanche Energy Rating (Eas) :
809 mJ
Width :
4.82mm
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
104m Ω @ 18.5A, 10V
Vgs (Max) :
±20V
Series :
HiPerFET™, Polar™
Published :
2013
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
5V
Number of Elements :
1
Packaging :
Tube
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
357W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Rise Time :
58ns
Weight :
6.39g
Factory Lead Time :
12 Weeks
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
37A
FET Type :
N-Channel
Package / Case :
TO-247-3
Transistor Application :
SWITCHING
Fall Time (Typ) :
20 ns
Height :
20.82mm
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
5950pF @ 100V
Gate Charge (Qg) (Max) @ Vgs :
139nC @ 10V
Turn On Delay Time :
34 ns
Power Dissipation-Max :
357W Tc
Vgs(th) (Max) @ Id :
5V @ 250μA
Turn-Off Delay Time :
98 ns
Datasheets
FCH104N60F
Introducing Transistors - FETs, MOSFETs - Single onsemi FCH104N60F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, FCH104N60F pinout, FCH104N60F datasheet PDF, FCH104N60F amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCH104N60F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCH104N60F


N-Channel Tube 104m Ω @ 18.5A, 10V ±20V 5950pF @ 100V 139nC @ 10V 600V TO-247-3

FCH104N60F Description


The SUPERFET? II MOSFET is a brand new high voltage super junction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SUPERFET II is ideal for Soft and Hard Switching topologies such as High Voltage Full Bridge and Half-Bridge DCDC, Interleaved Boost PFC, and Boost PFC for HEVEV automobiles.

The enhanced body diode reverse recovery performance of the SUPERFET II FRFET? MOSFET can eliminate a component and improve system reliability.



FCH104N60F Features


  • UIS Capability

  • Qualified to AEC Q101 and PPAP Capable

  • This Device is Pb?Free and is RoHS Compliant

  • Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A

  • Typical Qg(tot) = 109 nC at VGS = 10 V, ID = 18.5 A




FCH104N60F Applications


  • Automotive On-Board Charger

  • Automotive DC/DC Converter for HEV


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