FCH170N60
- Mfr.Part #
- FCH170N60
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO247-3
- Stock
- 9,404
- In Stock :
- 9,404
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Weight :
- 6.39g
- Height :
- 20.82mm
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 55 ns
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Continuous Drain Current (ID) :
- 22A
- Published :
- 2014
- Reach Compliance Code :
- not_compliant
- Length :
- 15.87mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 66A
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- JEDEC-95 Code :
- TO-247AB
- Number of Pins :
- 3
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1
- Width :
- 4.82mm
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 12ns
- Power Dissipation-Max :
- 227W Tc
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 21 ns
- Fall Time (Typ) :
- 3.8 ns
- Avalanche Energy Rating (Eas) :
- 525 mJ
- Drain to Source Breakdown Voltage :
- 600V
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 11A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Mounting Type :
- Through Hole
- Series :
- SuperFET® II
- Input Capacitance (Ciss) (Max) @ Vds :
- 2860pF @ 380V
- Datasheets
- FCH170N60

N-Channel Tube 170m Ω @ 11A, 10V ±20V 2860pF @ 380V 55nC @ 10V TO-247-3
FCH170N60 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 525 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2860pF @ 380V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.Peak drain current is 66A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FCH170N60 Features
the avalanche energy rating (Eas) is 525 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 66A.
FCH170N60 Applications
There are a lot of ON Semiconductor
FCH170N60 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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