FCB199N65S3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

245

Pulsed Drain Current-Max (IDM) :

35A

Input Capacitance (Ciss) (Max) @ Vds :

1225pF @ 400V

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Drain-source On Resistance-Max :

0.199Ohm

Avalanche Energy Rating (Eas) :

76 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4.5V @ 1.4mA

Drain Current-Max (Abs) (ID) :

14A

DS Breakdown Voltage-Min :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

199m Ω @ 7A, 10V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Series :

SuperFET® III

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Element Configuration :

Single

Weight :

1.31247g

Vgs (Max) :

±30V

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-609 Code :

e3

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

98W Tc

Drain to Source Voltage (Vdss) :

650V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V