FCB199N65S3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

35A

Pbfree Code :

yes

Power Dissipation-Max :

98W Tc

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

650V

Vgs(th) (Max) @ Id :

4.5V @ 1.4mA

Input Capacitance (Ciss) (Max) @ Vds :

1225pF @ 400V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Series :

SuperFET® III

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Transistor Application :

SWITCHING

Mount :

Surface Mount

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

245

Number of Elements :

1

Terminal Form :

Gull wing

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

199m Ω @ 7A, 10V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Drain Current-Max (Abs) (ID) :

14A

Drain-source On Resistance-Max :

0.199Ohm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Weight :

1.31247g

Avalanche Energy Rating (Eas) :

76 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drain to Source Voltage (Vdss) :

650V

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel