FCB11N60TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2005

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Nominal Vgs :

5 V

Power Dissipation-Max :

125W Tc

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Resistance :

380mOhm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Rise Time :

98ns

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Turn-Off Delay Time :

119 ns

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

11A

Height :

4.83mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1490pF @ 25V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Power Dissipation :

125W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Turn On Delay Time :

34 ns

Drain to Source Breakdown Voltage :

600V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Length :

10.67mm

Series :

SuperFET™

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Voltage - Rated DC :

600V

Weight :

1.31247g

Base Part Number :

FCB11N60

Fall Time (Typ) :

56 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

11A

JESD-609 Code :

e3

Width :

9.65mm

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

2

Threshold Voltage :

5V

Case Connection :

DRAIN