ESM3045DV

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Mfr.Part #
ESM3045DV
Manufacturer
STMicroelectronics
Package / Case
ISOTOP
Datasheet
Download
Description
TRANS NPN DARL 450V 24A ISOTOP
Stock
29,539
In Stock :
29,539

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
7V
Number of Pins :
4
Polarity :
NPN
Collector Emitter Voltage (VCEO) :
450V
Number of Terminations :
4
Configuration :
DARLINGTON WITH BUILT-IN DIODE
Transistor Type :
NPN - Darlington
Mount :
Chassis Mount, Screw
Terminal Position :
UPPER
Case Connection :
Isolated
Max Collector Current :
24A
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 20A 5V
Collector Emitter Breakdown Voltage :
450V
Current Rating :
24A
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
1.4V @ 1.2A, 20A
Pin Count :
4
Mounting Type :
Chassis Mount
Base Part Number :
ESM3045
Package / Case :
ISOTOP
Collector Emitter Saturation Voltage :
2V
Terminal Form :
UNSPECIFIED
Operating Temperature :
150°C TJ
Radiation Hardening :
No
Packaging :
Tube
VCEsat-Max :
2 V
Max Power Dissipation :
125W
RoHS Status :
ROHS3 Compliant
hFE Min :
120
Lead Free :
Lead Free
Terminal Finish :
Nickel (Ni)
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
450V
Transistor Application :
SWITCHING
Datasheets
ESM3045DV
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics ESM3045DV from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Number of Terminations:4, Mounting Type:Chassis Mount, Base Part Number:ESM3045, Package / Case:ISOTOP, Operating Temperature:150°C TJ, ESM3045DV pinout, ESM3045DV datasheet PDF, ESM3045DV amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics ESM3045DV ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics ESM3045DV


NPN - Darlington 150°C TJ 1 Elements 4 Terminations SILICON ISOTOP Tube Chassis Mount

ESM3045DV Overview


In this device, the DC current gain is 120 @ 20A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 1.2A, 20A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (24A).Maximum collector currents can be below 24A volts.

ESM3045DV Features


the DC current gain for this device is 120 @ 20A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 1.4V @ 1.2A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 24A


ESM3045DV Applications


There are a lot of STMicroelectronics
ESM3045DV applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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