ESM3030DV

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Mfr.Part #
ESM3030DV
Manufacturer
STMicroelectronics
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
TRANS NPN DARL 300V 100A ISOTOP
Stock
1
In Stock :
1

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Height :
9.1mm
Terminal Form :
UNSPECIFIED
Number of Pins :
4
Max Collector Current :
100A
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
300V
Package / Case :
SOT-227-4, miniBLOC
Element Configuration :
Single
Case Connection :
Isolated
Mounting Type :
Chassis Mount
Width :
25.4mm
Current Rating :
100A
Length :
38.2mm
Terminal Finish :
Nickel (Ni)
Emitter Base Voltage (VEBO) :
7V
REACH SVHC :
No SVHC
Number of Elements :
1
Mount :
Chassis Mount, Panel, Screw
Packaging :
Tube
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Radiation Hardening :
No
Number of Terminations :
4
Power Dissipation :
225W
hFE Min :
300
Pin Count :
4
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN - Darlington
Voltage - Rated DC :
300V
Lead Free :
Lead Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 85A 5V
Terminal Position :
UPPER
Base Part Number :
ESM3030
VCEsat-Max :
2.2 V
Collector Emitter Voltage (VCEO) :
300V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 2.4A, 85A
Transistor Application :
SWITCHING
Fall Time-Max (tf) :
600ns
Polarity :
NPN
Collector Emitter Saturation Voltage :
1.8V
Max Power Dissipation :
225W
Datasheets
ESM3030DV
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics ESM3030DV from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, Operating Temperature:150°C TJ, Number of Terminations:4, Base Part Number:ESM3030, ESM3030DV pinout, ESM3030DV datasheet PDF, ESM3030DV amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics ESM3030DV ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics ESM3030DV


NPN - Darlington 150°C TJ 1 Elements 4 Terminations SILICON SOT-227-4, miniBLOC Tube Chassis Mount

ESM3030DV Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 85A 5V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 2.4A, 85A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100A.A maximum collector current of 100A volts can be achieved.

ESM3030DV Features


the DC current gain for this device is 300 @ 85A 5V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.5V @ 2.4A, 85A
the emitter base voltage is kept at 7V
the current rating of this device is 100A


ESM3030DV Applications


There are a lot of STMicroelectronics
ESM3030DV applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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