EMX5T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Published :

2007

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 10V

Collector-Base Capacitance-Max :

1.55pF

Number of Terminations :

6

Terminal Finish :

TIN COPPER

Base Part Number :

MX5

Polarity :

NPN

Element Configuration :

Dual

JESD-609 Code :

e2

Pbfree Code :

yes

Terminal Form :

Flat

Emitter Base Voltage (VEBO) :

3V

Mounting Type :

Surface Mount

Voltage - Rated DC :

11V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-563, SOT-666

Transition Frequency :

3200MHz

ECCN Code :

EAR99

Max Power Dissipation :

150mW

Current - Collector Cutoff (Max) :

500nA ICBO

Gain Bandwidth Product :

3.2 GHz

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

11V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 10mA

HTS Code :

8541.21.00.75

Transistor Type :

2 NPN (Dual)

Max Collector Current :

50mA

Lead Free :

Lead Free

Radiation Hardening :

No

hFE Min :

56

Number of Elements :

2

Current Rating :

50mA

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

20V

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

11V

Collector Emitter Breakdown Voltage :

11V

Pin Count :

6