EMX52T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Transistor Application :

SWITCHING

Max Power Dissipation :

150mW

Packaging :

Cut Tape (CT)

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

2 NPN (Dual)

Current - Collector Cutoff (Max) :

100nA ICBO

Transition Frequency :

350MHz

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Frequency - Transition :

350MHz

Max Collector Current :

100mA

Number of Terminations :

6

Terminal Form :

Flat

Operating Temperature :

150°C TJ

Polarity/Channel Type :

NPN

Factory Lead Time :

10 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Collector Emitter Voltage (VCEO) :

300mV

Package / Case :

SOT-563, SOT-666

Max Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Power - Max :

150mW

Published :

2015

Transistor Element Material :

SILICON