EMX52T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Transistor Type :

2 NPN (Dual)

Collector Emitter Breakdown Voltage :

50V

Polarity/Channel Type :

NPN

Configuration :

SEPARATE, 2 ELEMENTS

Published :

2015

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

300mV

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

10 Weeks

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

SOT-563, SOT-666

Number of Terminations :

6

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PDSO-F6

Max Power Dissipation :

150mW

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power - Max :

150mW

Max Collector Current :

100mA

Frequency - Transition :

350MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Transition Frequency :

350MHz