EMX1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Power Dissipation :

150mW

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

10

REACH SVHC :

No SVHC

Number of Pins :

6

Number of Elements :

2

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Collector Base Voltage (VCBO) :

60V

Terminal Finish :

Tin/Copper (Sn/Cu)

Gain Bandwidth Product :

180MHz

Max Collector Current :

150mA

Base Part Number :

*MX1

Lead Free :

Lead Free

Voltage - Rated DC :

50V

Terminal Form :

Flat

Mounting Type :

Surface Mount

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

7V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

Transistor Type :

2 NPN (Dual)

Max Power Dissipation :

150mW

Polarity :

NPN

Max Breakdown Voltage :

50V

Package / Case :

SOT-563, SOT-666

Transistor Element Material :

SILICON

Continuous Collector Current :

150mA

Current Rating :

150mA

Frequency :

180MHz

hFE Min :

120

Mount :

Surface Mount

Transition Frequency :

180MHz

JESD-609 Code :

e2

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA