EMX1DXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Surface Mount :

yes

Length :

1.7mm

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Number of Elements :

2

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Transistor Type :

2 NPN (Dual)

Frequency :

180MHz

Current Rating :

100mA

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Mounting Type :

Surface Mount

JESD-609 Code :

e3

hFE Min :

120

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

180MHz

Element Configuration :

Dual

Pbfree Code :

yes

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

60V

Emitter Base Voltage (VEBO) :

7V

Collector Emitter Voltage (VCEO) :

50V

Power Dissipation :

500mW

Width :

1.3mm

Max Power Dissipation :

500mW

Height :

600μm

Collector Emitter Saturation Voltage :

400mV

Current - Collector Cutoff (Max) :

500nA ICBO

Voltage - Rated DC :

50V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-563, SOT-666

Factory Lead Time :

2 Weeks

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Gain Bandwidth Product :

180MHz

Terminal Form :

Flat

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Contact Plating :

Tin

Polarity :

NPN

Published :

2005

RoHS Status :

ROHS3 Compliant