EMH9T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Factory Lead Time :

13 Weeks

Continuous Collector Current :

100mA

Published :

2011

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 4.7

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

hFE Min :

68

Transistor Type :

2 NPN - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Number of Elements :

2

Transition Frequency :

250MHz

JESD-609 Code :

e3/e2

Mount :

Surface Mount

Resistor - Base (R1) :

10k Ω

Base Part Number :

*MH9

Current Rating :

70mA

Element Configuration :

Dual

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.75

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Lead Free :

Lead Free

Frequency - Transition :

250MHz

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Voltage - Rated DC :

50V

Pbfree Code :

yes

Max Power Dissipation :

150mW

Pin Count :

6

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Power Dissipation :

150mW

Number of Terminations :

6

Transistor Application :

SWITCHING

Polarity :

NPN

Resistor - Emitter Base (R2) :

47k Ω

Time@Peak Reflow Temperature-Max (s) :

10

Collector Emitter Voltage (VCEO) :

300mV

Terminal Finish :

TIN/TIN COPPER