EMH25FHAT2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector-Emitter Voltage-Max :

50V

Number of Terminations :

6

Frequency - Transition :

250MHz

Resistor - Emitter Base (R2) :

47k Ω

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Packaging :

Cut Tape (CT)

Polarity/Channel Type :

NPN

Power - Max :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Factory Lead Time :

13 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

JESD-30 Code :

R-PDSO-F6

Current - Collector (Ic) (Max) :

100mA

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

2 NPN - Pre-Biased (Dual)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 10

Transistor Element Material :

SILICON

Resistor - Base (R1) :

4.7k Ω

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Transition Frequency :

250MHz

Package / Case :

SOT-563, SOT-666

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

Automotive, AEC-Q101

Number of Elements :

2

Published :

2016

ECCN Code :

EAR99