EMG9T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Published :

2004

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

10k Ω

Factory Lead Time :

13 Weeks

Transistor Application :

SWITCHING

Current Rating :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Finish :

TIN COPPER

Number of Pins :

5

Number of Elements :

2

Resistor - Base (R1) :

10k Ω

Collector Emitter Voltage (VCEO) :

300mV

Max Collector Current :

100mA

Pbfree Code :

yes

Frequency - Transition :

250MHz

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Package / Case :

6-SMD (5 Leads), Flat Lead

Transition Frequency :

250MHz

Voltage - Rated DC :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Current - Collector Cutoff (Max) :

500nA

Min Operating Temperature :

-55°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Operating Temperature :

150°C

Pin Count :

5

Base Part Number :

*MG9

Max Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

hFE Min :

30