EMG6T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

Transistor Type :

2 NPN - Pre-Biased (Dual)

Transition Frequency :

250MHz

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Lead Free :

Lead Free

Number of Pins :

5

Max Operating Temperature :

150°C

Max Breakdown Voltage :

50V

Terminal Finish :

TIN COPPER

Peak Reflow Temperature (Cel) :

260

Package / Case :

6-SMD (5 Leads), Flat Lead

Polarity :

NPN

Max Power Dissipation :

150mW

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Resistor - Base (R1) :

47k Ω

Power Dissipation :

150mW

Number of Terminations :

5

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

50V

Published :

2004

Current - Collector Cutoff (Max) :

500nA ICBO

Min Operating Temperature :

-55°C

Base Part Number :

*MG6

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

hFE Min :

100

Frequency - Transition :

250MHz

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Pin Count :

5

JESD-609 Code :

e2

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

100mA

Number of Elements :

2