EMG3T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Factory Lead Time :

13 Weeks

Max Power Dissipation :

150mW

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Radiation Hardening :

No

Frequency - Transition :

250MHz

Pin Count :

5

Continuous Collector Current :

100mA

Terminal Finish :

Tin/Copper (Sn/Cu)

Collector Emitter Breakdown Voltage :

50V

hFE Min :

100

Polarity :

NPN

Number of Pins :

5

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Operating Temperature :

150°C

Power Dissipation :

150mW

Collector Emitter Voltage (VCEO) :

50V

Base Part Number :

*MG3

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA ICBO

Number of Terminations :

5

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

50V

Number of Elements :

2

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

JESD-609 Code :

e2

Resistor - Base (R1) :

4.7k Ω

Transistor Application :

SWITCHING

Min Operating Temperature :

-55°C

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Lead Free :

Lead Free

Mount :

Surface Mount

Mounting Type :

Surface Mount

Package / Case :

SC-75, SOT-416

Transition Frequency :

250MHz