EMG3T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

Pin Count :

5

Number of Terminations :

5

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Pbfree Code :

yes

Number of Pins :

5

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

4.7k Ω

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

10

Frequency - Transition :

250MHz

Continuous Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA ICBO

Polarity :

NPN

Published :

2012

Packaging :

Tape and Reel (TR)

Package / Case :

SC-75, SOT-416

Lead Free :

Lead Free

Number of Elements :

2

Terminal Form :

Flat

Max Power Dissipation :

150mW

hFE Min :

100

Base Part Number :

*MG3

Transition Frequency :

250MHz

Factory Lead Time :

13 Weeks

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin/Copper (Sn/Cu)

Radiation Hardening :

No

Transistor Type :

2 NPN - Pre-Biased (Dual)

Power Dissipation :

150mW