EMD9T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Power Dissipation :

150mW

Polarity :

NPN, PNP

Collector Emitter Breakdown Voltage :

50V

Pbfree Code :

yes

Factory Lead Time :

13 Weeks

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Lead Free :

Lead Free

Terminal Finish :

TIN/TIN COPPER

REACH SVHC :

No SVHC

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Max Output Current :

100mA

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Radiation Hardening :

No

Terminal Form :

Flat

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

300mV

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Current Rating :

70mA

JESD-609 Code :

e3/e2

Voltage - Rated DC :

50V

Base Part Number :

*MD9

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

hFE Min :

68

Operating Supply Voltage :

50V

Element Configuration :

Dual

Min Operating Temperature :

-55°C

HTS Code :

8541.21.00.75

Number of Terminations :

6

Transistor Application :

SWITCHING

Published :

2010

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Frequency - Transition :

250MHz

Resistor - Emitter Base (R2) :

47k Ω

Number of Pins :

6

Resistor - Base (R1) :

10k Ω

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Power Dissipation :

150mW

Transition Frequency :

250MHz