EMD30T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Application :

SWITCHING

Max Power Dissipation :

150mW

Terminal Form :

Flat

Max Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

Terminal Finish :

TIN COPPER

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

260MHz

Published :

2008

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Package / Case :

SMD/SMT

JESD-609 Code :

e2

Number of Elements :

2

Max Collector Current :

200mA

Polarity :

NPN, PNP

Number of Pins :

6

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

DC Current Gain-Min (hFE) :

30

Element Configuration :

Dual

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

30V

Pbfree Code :

yes

Mount :

Surface Mount

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

300mV

Continuous Collector Current :

-200mA

Pin Count :

6

Power Dissipation :

150mW

Min Operating Temperature :

-55°C