EMD12FHAT2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.0

Number of Terminations :

6

Packaging :

Cut Tape (CT)

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Transition Frequency :

250MHz

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Frequency - Transition :

250MHz

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Power - Max :

150mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

NPN AND PNP

Transistor Element Material :

SILICON

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector-Emitter Voltage-Max :

50V

Surface Mount :

yes

Series :

Automotive, AEC-Q101

Resistor - Emitter Base (R2) :

47k Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F6

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Published :

2016

RoHS Status :

ROHS3 Compliant

Current - Collector (Ic) (Max) :

100mA

Resistor - Base (R1) :

47k Ω

ECCN Code :

EAR99