EMB6T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Number of Elements :

2

Pin Count :

6

JESD-609 Code :

e2

Resistor - Emitter Base (R2) :

47k Ω

Transistor Application :

SWITCHING

Pbfree Code :

yes

Terminal Finish :

TIN COPPER

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2004

Lead Free :

Lead Free

Package / Case :

SOT-563, SOT-666

HTS Code :

8541.21.00.75

Terminal Form :

Flat

ECCN Code :

EAR99

Voltage - Rated DC :

-50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Frequency - Transition :

250MHz

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

47k Ω

Current Rating :

-50mA

Max Collector Current :

30mA

Transition Frequency :

250MHz

Current - Collector Cutoff (Max) :

500nA

Mount :

Surface Mount

Base Part Number :

MB6

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Polarity :

PNP

Collector Emitter Voltage (VCEO) :

300mV

Number of Terminations :

6

Factory Lead Time :

10 Weeks

Max Operating Temperature :

150°C

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

hFE Min :

68

Max Power Dissipation :

150mW

Transistor Type :

2 PNP - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Element Configuration :

Dual