EMA6DXV5T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Base Part Number :

MA6

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Pbfree Code :

yes

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Mount :

Surface Mount

Continuous Collector Current :

100mA

Number of Pins :

5

Additional Feature :

BUILT-IN BIAS RESISTOR

Pin Count :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Qualification Status :

Not Qualified

hFE Min :

160

Number of Elements :

2

Terminal Finish :

Tin (Sn)

RoHS Status :

RoHS Compliant

Max Collector Current :

100mA

Max Power Dissipation :

230mW

Collector Emitter Voltage (VCEO) :

250mV

Number of Terminations :

5

Published :

2009

Power Dissipation :

230mW

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-50V

Packaging :

Cut Tape (CT)

Terminal Form :

Flat

Transistor Type :

2 PNP - Pre-Biased (Dual)

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

47k Ω

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

Polarity :

PNP

Package / Case :

SOT-553

Current Rating :

-100mA