EDB4432BBBJ-1DAAT-F-D

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Width :

32

RoHS Status :

ROHS3 Compliant

Packaging :

Tray

Width :

10mm

Supply Voltage-Max (Vsup) :

1.95V

Memory Format :

DRAM

Operating Mode :

SYNCHRONOUS

Voltage - Supply :

1.14V~1.95V

Supply Voltage-Min (Vsup) :

1.14V

Additional Feature :

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

ECCN Code :

EAR99

Terminal Pitch :

0.65mm

Length :

11.5mm

Surface Mount :

yes

JESD-609 Code :

e1

Memory Size :

4Gb 128M x 32

Peak Reflow Temperature (Cel) :

260

Supply Voltage :

1.2V

Number of Functions :

1

Memory Type :

Volatile

Terminal Position :

BOTTOM

Number of Ports :

1

Mounting Type :

Surface Mount

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

-40°C~105°C TC

Memory Interface :

Parallel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

134

Memory Density :

4294967296 bit

Time@Peak Reflow Temperature-Max (s) :

30

Organization :

128MX32

JESD-30 Code :

R-PBGA-B134

Height Seated (Max) :

0.75mm

Package / Case :

134-WFBGA

Factory Lead Time :

8 Weeks

Clock Frequency :

533MHz

Access Mode :

SINGLE BANK PAGE BURST