EDB4064B4PB-1D-F-R TR

Memory Micron Technology EDB4064B4PB-1D-F-R TR Overview

The Memory Micron Technology EDB4064B4PB-1D-F-R TR is a cutting-edge DRAM (Dynamic Random Access Memory) component designed for high-performance applications. With a capacity of 4 Gbit and a 216WFBGA package, this integrated circuit is engineered by Micron Technology, a leader in memory and storage solutions. Its advanced architecture ensures efficient data handling and high-speed operation, making it an ideal choice for systems requiring rapid access to large volumes of data. The robust design and proven manufacturing excellence of Micron Technology guarantee reliability and durability in demanding operational environments, positioning it as a preferred option for B2B clients looking to bulk purchase high-quality, reliable memory components.

EDB4064B4PB-1D-F-R TR Features

• 4 Gbit DRAM capacity
• Parallel interface for efficient data transfer
• 216-pin WFBGA package for reduced physical footprint
• High data bandwidth suitable for intensive applications
• Robust thermal design for enhanced durability under high workloads

EDB4064B4PB-1D-F-R TR Applications

• Enterprise Servers and Data Centers: Provides the necessary speed and capacity for handling large-scale data processing and storage operations.
• Telecommunications Equipment: Ensures rapid data access and processing capabilities required for network management and signal processing.
• High-Performance Computing (HPC): Ideal for computations that require access to large volumes of data at high speeds, enhancing overall system efficiency.
• Advanced Gaming Systems: Offers the high-speed data manipulation needed for complex gaming graphics and in-game physics calculations.
• Embedded Systems: Suitable for use in specialized embedded applications where space and power efficiency are critical, yet large memory capacity is required.