EDB4064B3PB-8D-F-D

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Mfr.Part #
EDB4064B3PB-8D-F-D
Manufacturer
Micron Technology
Package / Case
216-WFBGA
Datasheet
Download
Description
IC DRAM 4GBIT PARALLEL 216WFBGA
Stock
23,485
In Stock :
23,485

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Manufacturer :
Micron Technology
Product Category :
Memory
Operating Temperature :
-30°C~85°C TC
Memory Type :
Volatile
Max Frequency :
400MHz
RoHS Status :
ROHS3 Compliant
Packaging :
Tray
Frequency :
400MHz
Supplier Device Package :
216-WFBGA (12x12)
Memory Size :
4Gb 64M x 64
Min Operating Temperature :
-30°C
Voltage - Supply :
1.14V~1.95V
Memory Format :
DRAM
Package / Case :
216-WFBGA
Max Operating Temperature :
85°C
Clock Frequency :
400MHz
Address Bus Width :
14b
Mounting Type :
Surface Mount
Interface :
Parallel
Memory Interface :
Parallel
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Density :
4 GB
Number of Pins :
216
Published :
2015
Datasheets
EDB4064B3PB-8D-F-D
Introducing Memory Micron Technology EDB4064B3PB-8D-F-D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-30°C~85°C TC, Package / Case:216-WFBGA, Mounting Type:Surface Mount, Number of Pins:216, EDB4064B3PB-8D-F-D pinout, EDB4064B3PB-8D-F-D datasheet PDF, EDB4064B3PB-8D-F-D amp .Beyond Memory Micron Technology EDB4064B3PB-8D-F-D ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology EDB4064B3PB-8D-F-D


Memory Micron Technology EDB4064B3PB-8D-F-D Overview

The Memory Micron Technology EDB4064B3PB-8D-F-D represents a state-of-the-art DRAM module designed to meet the demanding requirements of modern high-performance computing systems. Manufactured by Micron Technology, this IC DRAM component offers a substantial 4 Gbit capacity, encapsulated in a compact 216WFBGA package. This product is engineered to deliver high-speed data transmission and low-power operation, making it an ideal choice for applications requiring massive data handling capabilities and efficient power management. The integration of advanced technology in the EDB4064B3PB-8D-F-D ensures that it can support the rigorous needs of both existing and emerging memory applications, setting a new standard in DRAM performance.

EDB4064B3PB-8D-F-D Features

This IC DRAM features a 4 Gbit parallel interface, offering high data transfer rates that are essential for throughput-intensive applications. Its 216-pin WFBGA (fine-pitch ball grid array) packaging not only allows for a more compact design but also enhances the thermal and electrical performance of the device. With robust support for extended temperature ranges, the EDB4064B3PB-8D-F-D is built to withstand diverse operating conditions, ensuring reliability and stability across various user scenarios.

EDB4064B3PB-8D-F-D Applications

  • Smartphones and Tablets: Utilizes its high-speed data processing capabilities to manage multiple applications simultaneously, enhancing the multitasking experience.
  • Embedded Systems: Employs its robust thermal and electrical properties to perform reliably in harsh environmental conditions, suitable for automotive and industrial applications.
  • Personal Computers: Supports complex computations and graphics processing, providing the necessary speed and efficiency for high-end computing tasks.
  • Data Centers: Takes advantage of its large capacity and speed to handle vast amounts of data, crucial for server applications and network infrastructure.
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