ECH8695R-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

320ns

Contact Plating :

Tin

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

12.5V

Height :

900μm

Continuous Drain Current (ID) :

11A

Fall Time (Typ) :

22.3 μs

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

2.3mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Pbfree Code :

yes

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 5A, 4.5V

Published :

2013

FET Feature :

Logic Level Gate, 2.5V Drive

Max Power Dissipation :

1.4W

Drain to Source Breakdown Voltage :

24V

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Vgs(th) (Max) @ Id :

1.3V @ 1mA

Length :

2.9mm

Turn On Delay Time :

300 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

24V

Factory Lead Time :

6 Weeks

JESD-609 Code :

e6

Element Configuration :

Dual

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Package / Case :

8-SMD, Flat Lead

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual) Common Drain

Turn-Off Delay Time :

19.7 μs