ECH8102-TL-H
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- Mfr.Part #
- ECH8102-TL-H
- Manufacturer
- onsemi
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 30V 12A 8ECH
- Stock
- 1,228
- In Stock ：
- 1,228
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 135mV @ 300mA, 6A
- hFE Min :
- 200
- Terminal Position :
- Dual
- Power - Max :
- 1.6W
- Number of Terminations :
- 8
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Collector Emitter Voltage (VCEO) :
- 135mV
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Pin Count :
- 8
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency - Transition :
- 140MHz
- Surface Mount :
- yes
- Max Power Dissipation :
- 1.6W
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- JESD-609 Code :
- e6
- Published :
- 2013
- Max Collector Current :
- 12A
- Package / Case :
- 8-SMD, Flat Lead
- Transistor Type :
- PNP
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 140MHz
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 30V
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -6V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 2 Weeks
- Max Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Datasheets
- ECH8102-TL-H
PNP 150°C TJ 100nA ICBO 1 Elements 8 Terminations SILICON PNP 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount
ECH8102-TL-H Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 135mV @ 300mA, 6A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
ECH8102-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 135mV @ 300mA, 6A
the emitter base voltage is kept at -6V
a transition frequency of 140MHz
ECH8102-TL-H Applications
There are a lot of ON Semiconductor
ECH8102-TL-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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