ECH8693R-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12.5V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate, 2.5V Drive

Turn-Off Delay Time :

18.65 μs

Contact Plating :

Tin

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0091Ohm

Number of Channels :

2

Pulsed Drain Current-Max (IDM) :

60A

Max Power Dissipation :

1.4W

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

24V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

17 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Published :

2015

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

14A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rise Time :

525ns

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual) Common Drain

Drain to Source Breakdown Voltage :

24V

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

7m Ω @ 5A, 4.5V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Pin Count :

8

Turn On Delay Time :

545 ns

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e6

Package / Case :

8-SMD, Flat Lead

Fall Time (Typ) :

22.2 μs