ECH8693R-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Rise Time :

525ns

Contact Plating :

Tin

Number of Terminations :

8

JESD-609 Code :

e6

Transistor Element Material :

SILICON

Radiation Hardening :

No

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0091Ohm

Package / Case :

8-SMD, Flat Lead

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Fall Time (Typ) :

22.2 μs

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Drain to Source Breakdown Voltage :

24V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

14A

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Published :

2015

Drain to Source Voltage (Vdss) :

24V

Pulsed Drain Current-Max (IDM) :

60A

Number of Pins :

8

Number of Channels :

2

Mount :

Surface Mount

Turn On Delay Time :

545 ns

Max Power Dissipation :

1.4W

Rds On (Max) @ Id, Vgs :

7m Ω @ 5A, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual) Common Drain

Turn-Off Delay Time :

18.65 μs

Gate to Source Voltage (Vgs) :

12.5V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Factory Lead Time :

17 Weeks

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate, 2.5V Drive

Transistor Application :

SWITCHING