ECH8690-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-SMD, Flat Lead

Current - Continuous Drain (Id) @ 25°C :

4.7A 3.5A

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Operating Temperature :

150°C TJ

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

21 Weeks

Power Dissipation :

1.8W

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Lead Free :

Lead Free

Pin Count :

8

Pbfree Code :

yes

Surface Mount :

yes

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate, 4V Drive

Element Configuration :

Dual

ECCN Code :

EAR99

Radiation Hardening :

No

Max Power Dissipation :

1.5W

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

955pF @ 20V

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

55m Ω @ 2A, 10V

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.5A

Drain Current-Max (Abs) (ID) :

4.7A