ECH8668-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Mounting Type :

Surface Mount

Package / Case :

8-SMD, Flat Lead

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Terminations :

8

Turn-Off Delay Time :

68 ns

Number of Elements :

2

Transistor Element Material :

SILICON

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

7.5A 5A

Factory Lead Time :

2 Weeks

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Continuous Drain Current (ID) :

5A

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

0.017Ohm

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 4.5V

Length :

2.9mm

Lead Free :

Lead Free

JESD-609 Code :

e6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

900μm

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 10V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

10V

Rds On (Max) @ Id, Vgs :

17m Ω @ 4A, 4.5V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Halogen Free :

Halogen Free

Turn On Delay Time :

17.5 ns

FET Type :

N and P-Channel

Power Dissipation :

1.5W

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

40A

Published :

2009

Operating Temperature :

150°C TJ

Surface Mount :

yes

Max Power Dissipation :

1.5W

Pin Count :

8

Width :

2.3mm

Number of Pins :

8

ECCN Code :

EAR99